Name: GT10J312(Q)
Brand: Toshiba Electronic Devices and Storage Corporation
SKU: GT10J312(Q)
Rating: 5.0 (99 reviews)

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Manufacturer Part: GT10J312(Q)

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: IGBT 600V 10A 60W TO220SM

Category: diskretni polprevodniški izdelki

Family: tranzistorji - igbts - enojni

Series: -

InStock: 0

Datasheets Online: GT10J312(Q) PDF

GT10J312(Q) Notice

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serija:-
paket:Tube
stanje dela:Obsolete
igbt tip:-
napetost - razčlenitev oddajnika kolektorja (maks.):600 V
tok - kolektor (ic) (max):10 A
tok - kolektor impulzni (icm):20 A
vce(on) (največ) @ vge, ic:2.7V @ 15V, 10A
moč - max:60 W
preklopna energija:-

vrsta vnosa:Standard
polnjenje vrat:-
td (vklop/izklop) pri 25°c:400ns/400ns
testno stanje:300V, 10A, 100Ohm, 15V
povratni čas okrevanja (trr):200 ns
delovna temperatura:150°C (TJ)
vrsta montaže:Surface Mount
paket / etui:TO-252-3, DPak (2 Leads + Tab), SC-63
paket naprav dobavitelja:TO-220SM

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Returning / Warranty	Warranty	Vsi nakupi imajo 30-dnevno politiko vračila denarja in 90-dnevno garancijo za morebitne proizvodne napake. Ta garancija ne velja za noben izdelek, pri katerem so bile okvare posledica nepravilne montaže stranke, neupoštevanja navodil, modifikacije izdelka, malomarnega ali nepravilnega delovanja

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